Native oxide free polycrystalline/single crystal Si interface obtained by in situ cleaning: effects on the electrical performances of polysilicon emitter transistors
Identifieur interne : 000583 ( Main/Exploration ); précédent : 000582; suivant : 000584Native oxide free polycrystalline/single crystal Si interface obtained by in situ cleaning: effects on the electrical performances of polysilicon emitter transistors
Auteurs : R. A. Puglisi [Italie] ; S. A. Lombardo [Italie] ; C. Spinella [Italie] ; S. U. Campisano [Italie] ; H. Monchoix [France] ; P. Rabinzohn [France]Source :
- Solid State Electronics [ 0038-1101 ] ; 1999.
Abstract
We compare polysilicon emitter bipolar transistors fabricated by using different treatments of the interface between single crystal and polycrystalline Si (polysilicon) in the emitter region. One of the treatments consisted in an in situ cleaning of the silicon surface performed in the deposition chamber prior to the polysilicon deposition, resulting in an oxide free interface. A detailed structural and electrical characterization of transistors with and without an oxide free interface is presented. It is shown that, even if common emitter current gain decrease is observed, a strong improvement of base resistance and breakdown voltage can be achieved, while maintaining noticeable high frequency characteristics.
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DOI: 10.1016/S0038-1101(99)00162-8
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<record><TEI wicri:istexFullTextTei="biblStruct"><teiHeader><fileDesc><titleStmt><title xml:lang="en">Native oxide free polycrystalline/single crystal Si interface obtained by in situ cleaning: effects on the electrical performances of polysilicon emitter transistors</title>
<author><name sortKey="Puglisi, R A" sort="Puglisi, R A" uniqKey="Puglisi R" first="R. A." last="Puglisi">R. A. Puglisi</name>
</author>
<author><name sortKey="Lombardo, S A" sort="Lombardo, S A" uniqKey="Lombardo S" first="S. A." last="Lombardo">S. A. Lombardo</name>
</author>
<author><name sortKey="Spinella, C" sort="Spinella, C" uniqKey="Spinella C" first="C." last="Spinella">C. Spinella</name>
</author>
<author><name sortKey="Campisano, S U" sort="Campisano, S U" uniqKey="Campisano S" first="S. U." last="Campisano">S. U. Campisano</name>
</author>
<author><name sortKey="Monchoix, H" sort="Monchoix, H" uniqKey="Monchoix H" first="H." last="Monchoix">H. Monchoix</name>
</author>
<author><name sortKey="Rabinzohn, P" sort="Rabinzohn, P" uniqKey="Rabinzohn P" first="P." last="Rabinzohn">P. Rabinzohn</name>
</author>
</titleStmt>
<publicationStmt><idno type="wicri:source">ISTEX</idno>
<idno type="RBID">ISTEX:B88A17F7B15875E1BFB50ADAE0C482DB666EC686</idno>
<date when="1999" year="1999">1999</date>
<idno type="doi">10.1016/S0038-1101(99)00162-8</idno>
<idno type="url">https://api.istex.fr/document/B88A17F7B15875E1BFB50ADAE0C482DB666EC686/fulltext/pdf</idno>
<idno type="wicri:Area/Main/Corpus">000905</idno>
<idno type="wicri:Area/Main/Curation">000905</idno>
<idno type="wicri:Area/Main/Exploration">000583</idno>
<idno type="wicri:explorRef" wicri:stream="Main" wicri:step="Exploration">000583</idno>
</publicationStmt>
<sourceDesc><biblStruct><analytic><title level="a" type="main" xml:lang="en">Native oxide free polycrystalline/single crystal Si interface obtained by in situ cleaning: effects on the electrical performances of polysilicon emitter transistors</title>
<author><name sortKey="Puglisi, R A" sort="Puglisi, R A" uniqKey="Puglisi R" first="R. A." last="Puglisi">R. A. Puglisi</name>
<affiliation wicri:level="1"><country xml:lang="fr">Italie</country>
<wicri:regionArea>Dipartimento di Fisica dell'Università, Unità INFM, Corso Italia, 57, I-95129 Catania</wicri:regionArea>
<wicri:noRegion>I-95129 Catania</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><country xml:lang="fr">Italie</country>
<wicri:regionArea>Consiglio Nazionale delle Ricerche (CNR), Istituto Nazionale di Metodologie e Tecnologie per la Microelettronica (IMETEM), Stradale Primosole, 50, I-95121 Catania</wicri:regionArea>
<wicri:noRegion>I-95121 Catania</wicri:noRegion>
</affiliation>
<affiliation></affiliation>
<affiliation wicri:level="1"><country wicri:rule="url">Italie</country>
</affiliation>
</author>
<author><name sortKey="Lombardo, S A" sort="Lombardo, S A" uniqKey="Lombardo S" first="S. A." last="Lombardo">S. A. Lombardo</name>
<affiliation wicri:level="1"><country xml:lang="fr">Italie</country>
<wicri:regionArea>Consiglio Nazionale delle Ricerche (CNR), Istituto Nazionale di Metodologie e Tecnologie per la Microelettronica (IMETEM), Stradale Primosole, 50, I-95121 Catania</wicri:regionArea>
<wicri:noRegion>I-95121 Catania</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Spinella, C" sort="Spinella, C" uniqKey="Spinella C" first="C." last="Spinella">C. Spinella</name>
<affiliation wicri:level="1"><country xml:lang="fr">Italie</country>
<wicri:regionArea>Consiglio Nazionale delle Ricerche (CNR), Istituto Nazionale di Metodologie e Tecnologie per la Microelettronica (IMETEM), Stradale Primosole, 50, I-95121 Catania</wicri:regionArea>
<wicri:noRegion>I-95121 Catania</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Campisano, S U" sort="Campisano, S U" uniqKey="Campisano S" first="S. U." last="Campisano">S. U. Campisano</name>
<affiliation wicri:level="1"><country xml:lang="fr">Italie</country>
<wicri:regionArea>Dipartimento di Fisica dell'Università, Unità INFM, Corso Italia, 57, I-95129 Catania</wicri:regionArea>
<wicri:noRegion>I-95129 Catania</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><country xml:lang="fr">Italie</country>
<wicri:regionArea>Consiglio Nazionale delle Ricerche (CNR), Istituto Nazionale di Metodologie e Tecnologie per la Microelettronica (IMETEM), Stradale Primosole, 50, I-95121 Catania</wicri:regionArea>
<wicri:noRegion>I-95121 Catania</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Monchoix, H" sort="Monchoix, H" uniqKey="Monchoix H" first="H." last="Monchoix">H. Monchoix</name>
<affiliation wicri:level="3"><country xml:lang="fr">France</country>
<wicri:regionArea>Applied Materials, France-11B, Chemin de La Dhuy, 38240 Meylan</wicri:regionArea>
<placeName><region type="region" nuts="2">Auvergne-Rhône-Alpes</region>
<region type="old region" nuts="2">Rhône-Alpes</region>
<settlement type="city">Meylan</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Rabinzohn, P" sort="Rabinzohn, P" uniqKey="Rabinzohn P" first="P." last="Rabinzohn">P. Rabinzohn</name>
<affiliation wicri:level="3"><country xml:lang="fr">France</country>
<wicri:regionArea>Applied Materials, France-11B, Chemin de La Dhuy, 38240 Meylan</wicri:regionArea>
<placeName><region type="region" nuts="2">Auvergne-Rhône-Alpes</region>
<region type="old region" nuts="2">Rhône-Alpes</region>
<settlement type="city">Meylan</settlement>
</placeName>
</affiliation>
</author>
</analytic>
<monogr></monogr>
<series><title level="j">Solid State Electronics</title>
<title level="j" type="abbrev">SSE</title>
<idno type="ISSN">0038-1101</idno>
<imprint><publisher>ELSEVIER</publisher>
<date type="published" when="1999">1999</date>
<biblScope unit="volume">43</biblScope>
<biblScope unit="issue">11</biblScope>
<biblScope unit="page" from="2085">2085</biblScope>
<biblScope unit="page" to="2091">2091</biblScope>
</imprint>
<idno type="ISSN">0038-1101</idno>
</series>
<idno type="istex">B88A17F7B15875E1BFB50ADAE0C482DB666EC686</idno>
<idno type="DOI">10.1016/S0038-1101(99)00162-8</idno>
<idno type="PII">S0038-1101(99)00162-8</idno>
</biblStruct>
</sourceDesc>
<seriesStmt><idno type="ISSN">0038-1101</idno>
</seriesStmt>
</fileDesc>
<profileDesc><textClass></textClass>
<langUsage><language ident="en">en</language>
</langUsage>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We compare polysilicon emitter bipolar transistors fabricated by using different treatments of the interface between single crystal and polycrystalline Si (polysilicon) in the emitter region. One of the treatments consisted in an in situ cleaning of the silicon surface performed in the deposition chamber prior to the polysilicon deposition, resulting in an oxide free interface. A detailed structural and electrical characterization of transistors with and without an oxide free interface is presented. It is shown that, even if common emitter current gain decrease is observed, a strong improvement of base resistance and breakdown voltage can be achieved, while maintaining noticeable high frequency characteristics.</div>
</front>
</TEI>
<affiliations><list><country><li>France</li>
<li>Italie</li>
</country>
<region><li>Auvergne-Rhône-Alpes</li>
<li>Rhône-Alpes</li>
</region>
<settlement><li>Meylan</li>
</settlement>
</list>
<tree><country name="Italie"><noRegion><name sortKey="Puglisi, R A" sort="Puglisi, R A" uniqKey="Puglisi R" first="R. A." last="Puglisi">R. A. Puglisi</name>
</noRegion>
<name sortKey="Campisano, S U" sort="Campisano, S U" uniqKey="Campisano S" first="S. U." last="Campisano">S. U. Campisano</name>
<name sortKey="Campisano, S U" sort="Campisano, S U" uniqKey="Campisano S" first="S. U." last="Campisano">S. U. Campisano</name>
<name sortKey="Lombardo, S A" sort="Lombardo, S A" uniqKey="Lombardo S" first="S. A." last="Lombardo">S. A. Lombardo</name>
<name sortKey="Puglisi, R A" sort="Puglisi, R A" uniqKey="Puglisi R" first="R. A." last="Puglisi">R. A. Puglisi</name>
<name sortKey="Puglisi, R A" sort="Puglisi, R A" uniqKey="Puglisi R" first="R. A." last="Puglisi">R. A. Puglisi</name>
<name sortKey="Spinella, C" sort="Spinella, C" uniqKey="Spinella C" first="C." last="Spinella">C. Spinella</name>
</country>
<country name="France"><region name="Auvergne-Rhône-Alpes"><name sortKey="Monchoix, H" sort="Monchoix, H" uniqKey="Monchoix H" first="H." last="Monchoix">H. Monchoix</name>
</region>
<name sortKey="Rabinzohn, P" sort="Rabinzohn, P" uniqKey="Rabinzohn P" first="P." last="Rabinzohn">P. Rabinzohn</name>
</country>
</tree>
</affiliations>
</record>
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